随着信息技术的飞速发展,对高性能非易失性存储器的需求日益增长。基于聚合物/纳米颗粒复合介质的阻变存储器凭借独特优势,成为研究热点。详细综述了近10年来基于聚合物和纳米颗粒复合介质材料的阻变存储器的性能和电阻转变机理。从介质层材料和结构的角度介绍了聚合物/纳米颗粒复合介质的电阻转变机理。首先介绍其基本结构与工作原理,剖析聚合物及纳米颗粒各自特性对存储性能的影响。接着探讨复合介质中界面效应、电荷传输机制等关键因素,以及通过调控纳米颗粒种类、尺寸、浓度和聚合物基体性质来优化存储器的性能,如提高存储窗口、循环稳定性与开关比等。最后,对聚合物/纳米颗粒复合介质材料在阻变存储器未来的发展进行了展望。以期为进一步推动基于聚合物/纳米颗粒复合介质的阻变存储器的发展提供理论依据。

With the rapid development of information technology,the demand for high-performance non-volatile memory devices continues to grow.Resistive random-access memory (RRAM) based on polymer/nanoparticle composites has become a research hotspot due to its unique advantages.This review comprehensively summarized the performance and resistive switching mechanism of RRAM based on polymer and nanoparticle composite materials in the past decade.From the perspective of the materials and structures of the dielectric layers,the resistive switching mechanism of polymer/nanoparticle composites was introduced.Firstly,the basic structure and mechanism were presented,and the influence of the respective properties of polymers and nanoparticles on the memory storage performance was analyzed.Then,it discussed the key factors such as the interfacial effect and the charge transport mechanism in the composites were,as well as the optimization of the performance of memory devices,such as improving the storage window,cycle stability,and on-off ratio by regulating the types,sizes,concentrations of nanoparticles and the properties of the polymer matrix.Finally,the future development of polymer/nanoparticle composites in RRAM was prospected,aiming to provide a theoretical basis for further promoting the development of RRAM based on polymer/nanoparticle composites.