为研究硅基材料的近红外发光特性,采用脉冲激光刻蚀技术,在一定的激光参数下(激光能量250mJ、重复频率1Hz、脉冲宽度30ns、光斑直径150μm)对单晶硅进行激光刻蚀,得到硅基微腔样品。通过扫描电子显微镜观察发现硅基微腔边缘有群簇结构产生。拉曼光谱分析表明,硅基微腔样品在694nm附近出现特征发光峰,该发光峰是由于硅基微腔边缘群簇结构中横向光学声子振动的特征发光。退火处理后的硅基微腔样品发光峰出现红移现象,发光峰从可见光波段的694nm逐渐红移到近红外光波段的878nm。利用脉冲激光沉积法对硅基微腔样品进行沉积,将激光聚焦到Si靶表面,使其溅射出等离子体,等离子体沉积到微腔样品上,得到镀膜硅基微腔样品。镀膜硅基微腔样品在900nm处出现近红外发光峰,该近红外光波段的发光峰可能是由于硅沉积到群簇中形成Si—Si键产生的。经1000℃退火后,样品在940nm处出现Si—Si键的近红外发光峰,较未退火样品出现红移现象,这种红移现象可能是由于高温退火促使微腔群簇晶化导致的。
To investigate the luminescent properties of silicon-based materials,a microcavity sample was fabricated by pulsed laser ablation of single-crystal silicon under certain laser parameters (laser energy 250mJ,repetition rate 1Hz,pulse width 30ns,spot diameter 150μm).SEM characterization revealed the formation of cluster structures at the edges of the microcavities.Raman spectroscopy detected a characteristic luminescence peak near 694nm in the silicon-based microcavity sample before deposition.This luminescence peak was attributed to the characteristic luminescence of the transverse optical (TO) phonon vibration generated in the cluster structures at the microcavity edges.After annealing treatment,the luminescence peak of the sample exhibited a redshift phenomenon,gradually shifting from 694nm in the visible band to 878nm in the near-infrared band.Subsequently,the silicon-based microcavity sample was deposited using pulsed laser deposition,focusing the laser onto the Si target surface to sputter plasma,and the plasma was deposited onto the microcavity sample to obtain a coated silicon-based microcavity sample.The coated silicon-based microcavity sample showed a near-infrared luminescence peak at 900nm,which might be attributed to the formation of Si—Si bonds when silicon was deposited into the clusters.After annealing at 1000℃,a characteristic luminescence peak of Si—Si bonds appeared at 940nm,exhibiting a redshift compared to the unannealed sample.The redshift of the luminescence peak might be due to the crystallization of the microcavity clusters induced by high-temperature annealing.
[1] 夏建白.硅发光研究[J].半导体学报,1998(5):2-7.
[2] 沈学础.半导体光学性质[M].北京:科学出版社,1992:128-130.
[3] Canham L T.Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers[J].Applied Physics Letters,1990,57:1046-1048.
[4] Canham L T,Leong W Y,Beale M I J,et al.Efficient visible electroluminescence from highly porous silicon under cathodic bias[J].Applied Physics Letters,1992,61:2563-2565.
[5] Cullis A G,Canham L T,Calcott P D J.The structural and luminescence properties of porous silicon[J].Journal of Applied Physics,1997,82:909-965.
[6] Bisi O,Ossicini S,Pavesi L.Porous silicon:a quantum sponge structure for silicon based optoelectronics[J].Surface Science Reports,2000,38:1-126.
[7] Kanemitsu Y,Uto H,Masumoto Y,et al.Microstruc ture and optical properties offree-stan ding porous silicon films:size dependence of absorption spectra in sinanometer-sized crystallites[J].Physical Review B:Condensed Matter,1993,48(4):2827-2830.
[8] Wilson W L,Szajowski P F,Brus L E.Quantum confinement in size-selected,surface-oxidi zed silicon nanocrystals[J].Science,1993,262(5137):1242-1244.
[9] Iacona F,Bongioron C,Spinella C,et al.Formation and evolution of luminescent sinano clusters produced by thermal annealing of SiOx films[J].Journal of Applied Physics,2004,95(7):3723-3733.
[10] Iwayama T,Ogihara K.Optical properties of Si nanocrystals in SiO2 matrix synthesized by reactive pulsed laser deposition[J].Journal of Physics:Conference Series,2020,1527:12027.
[11] Rotshteyn V M,Turdaliev T K,Ashurov K B.Analysis of porous nanosilicon by Raman spectroscopy[J].Journal of Applied Spectroscopy,2022,89(1):43-48.
[12] 陈翠芬,张铁民,王梓霖,等.纳秒脉冲激光制备硅量子点发光的退火效应[J].液晶与显示,2022,37(6):703-708.
[13] 陈翠芬.脉冲激光制备硅的微纳结构及发光性能研究[D].海口:海南师范大学,2023.
[14] Pradhan A K,Sen M,Datta T.LED pumped Raman laser:towards the design of an on-chip all-silicon laser[J].Optics & Laser Technology,2022,147:107634.
[15] Maryam A A D,Ali M A,Ahmed S A,et al.Information of silicon nanoparticles by pulsed laser[J].AIP Conference Proceedings,2023,2834(1):50040.
[16] 王安琛,黄忠梅,黄伟其,等.氧化硅层厚度对Si/SiO2界面电子态结构与光学性质的影响[J].光子学报,2023,52(1):228-239.
[17] Ptashchenko F.Electrochemical etching of porous silicon-DFT modeling[J].Computational Materials Science,2021,198(4):110695.
[18] 陈婷婷,顾牡,于怀娜,等.电化学刻蚀多孔硅阵列的形貌研究[J].电子元件与材料,2015,34(11):48-52.
[19] Otto M,Kroll M,Thomas K,et al.Extremely low surface recombination velocitiesinbla ck silicon passivated by atomic layer deposition[J].Applied Physics Letters,2012,100:191603.
[20] 廖乃镘,刘晓琴,杨修伟,等.黑硅微结构与光学特性研究[J].半导体光电,2017,38(6):818-821.
[21] Michailocska K,Indutnyi I,Shepeliavyi P,et al.Polarization memory effect in the photoluminescence of nc-Si-SiOx light-emitting structures[J].Nanoscale Res Lett,2016,11(1):277-283.
[22] 刘建苹,郑燕,刘海旭,等.镶嵌有纳米硅的SiNx薄膜光致发光的温度依赖特性研究[J].光谱学与光谱分析,2016,36(3):653-656.
[23] Alexander S,Yan C L,Lee J H,et al.Influence of the mobility of Pt nanoparticles on the anisotropic etching properties of silicon[J].ECS Solid State Letters,2013,2(2):22-24.
[24] Algasinger M,Paye J,Warner F,et al.Improved black silicon for photovoltaicapplicat ions[J].Advanced Energy Materials,2013,3(8):1068-1074.
[25] Vaccaro L,Sciortino L,Messina F,et al.Luminescent silicon nanocrystals produced bynear-infr ared nanosecond pulsed laser ablation in water[J].Applied Surface Science,2014,302:62-65.
[26] Huang W Q,Zhang R T,Wang H X,et al.Laser on porous silicon after oxidation by irradiation and annealing[J].Optics Communications,2008,281(20):5229-5233.
[27] 许丽,黄伟其,吴克跃,等.脉冲激光辐照单晶硅形成的低维结构及其光致荧光特性[J].强激光与粒子束,2008(1):58-61.
[28] Hang W Q,Xu L,Wu K Y,et al.Enhancement of photoluminescence emission in low-dimensional structures formed by irradiation of laser[J].Journal of Applied Physics,2007,102(5):28421.
基金资助
国家自然科学基金(U1704145);海南省自然科学基金(522MS062);海南省院士创新平台科研项目(YSPTZX202207);海南省高等学校教育教学改革研究项目(Hnjg2022-55);海南省高等学校教育教学改革研究重点项目(Hnjg2020ZD-17)
PDF
