利用激光刻蚀技术,在一定的激光参数下(激光能量250mJ、重复频率1Hz、脉冲宽度30ns、光斑直径150μm)对单晶硅进行刻蚀,4s后得到了硅基微腔样品。利用准分子外延设备,对样品进行了脉冲激光沉积实验。真空环境中对镱靶进行沉积,在微腔表面镀上一层Yb3+膜。拉曼光谱检测结果表明:在694nm和580nm处出现了特征峰,该双峰特性可能与硅镱键发光有关。随后,将掺Yb的微腔样品放入1000℃的高温管式炉中进行退火处理。退火后的样品经拉曼光谱检测,发现630nm处的硅氧特征峰,属于Si—O—Si桥键的局域态发光,并伴随580nm处硅镱键的特征发光。
A silicon-based microcavity sample was successfully fabricated by laser etching technology to etch single crystalline silicon for 4 seconds under specific laser parameters (laser energy of 250mJ,repetition frequency of 1Hz,pulse width of 30ns,and spot diameter of 150μm).Subsequently,a pulsed laser deposition experiment was conducted on the sample using an excimer epitaxy apparatus.In a vacuum environment,ytterbium target material was deposited,forming a layer of Yb3+ film on the surface of the microcavity.Raman spectroscopy analysis revealed that characteristic peaks appeared at 694nm and 580nm,which might be related to the luminescence of Si-Yb bonds.The Yb-doped microcavity sample was then subjected to annealing treatment in a high-temperature tube furnace at 1000℃.The annealed samples were examined by Raman spectroscopy,and a silicon-oxygen characteristic peak at 630nm was found,which corresponded to the localized state luminescence of Si—O—Si bridge bonds,accompanied by the characteristic luminescence of Si-Yb bonds at 580nm.
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基金资助
国家自然科学基金(U1704145);海南省自然科学基金项目(522MS062);海南省院士创新平台科研项目(YSPTZX202207);海南省高等学校教育教学改革研究项目(Hnjg2022-55);海南省高等学校教育教学改革研究重点项目(Hnjg2020ZD-17)
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