化学气相沉积法能够大面积合成石墨烯,但将生长的石墨烯转移到应用基底上是十分重要的问题。传统转移方法能够将石墨烯转移到特定的基底上,但不可避免有裂缝、残胶和褶皱等不足,综述了石墨烯薄膜的转移和直接在绝缘基底表面生长的方法,并介绍了选择性刻蚀石墨烯生长基底或制造石墨烯纳米孔的新方法和应用前景。
The chemical vapor deposition method (CVD) can synthesize graphene(rGO) on large area,but it is a very important problem to transfer the grown rGO to the application substrate.The traditional transfer method can transfer it to specific substrate,but inevitably there are cracks,residual glue and folds and other deficiencies.The transfer of rGO films and the methods of direct growth on the surface of insulating substrates were reviewed,and introduced new methods and application prospects for selectively etching rGO growth substrates or fabricating rGO nanopores.
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基金资助
国家“973”计划资助项目(613310401);湖南省自然科学基金(2020JJ5654)
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