Ag元素掺杂Bi2S3薄膜的制备及其光电性能研究

王家钰, 周威, 谭海军, 龚琪芯, 黎燕, 钟福新*

化工新型材料 ›› 2022, Vol. 50 ›› Issue (8) : 100 -105.

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化工新型材料 ›› 2022, Vol. 50 ›› Issue (8) : 100-105. DOI: 10.19817/j.cnki.issn1006-3536.2022.08.019
新材料与新技术

Ag元素掺杂Bi2S3薄膜的制备及其光电性能研究

    王家钰, 周威, 谭海军, 龚琪芯, 黎燕, 钟福新*
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Preparation and photoelectric property of Ag-doped Bi2S3 film

  • Wang Jiayu, Zhou Wei, Tan Haijun, Gong Qixin, Li Yan, Zhong Fuxin
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摘要

利用连续离子沉积法和水热法在FTO基底上制备了Ag+掺杂Bi2S3薄膜(Ag-Bi2S3),探究了Ag+浓度对Bi2S3薄膜光电性能的影响。并用扫描电镜、能谱、X射线衍射(XRD)、紫外-可见分光光度计(UV-Vis DRS)等手段对其进行表征。结果表明:Ag-Bi2S3薄膜局部出现由较短的条状晶体聚集形成的花辫带,并有Ag元素的能谱峰,Ag+掺杂进Bi2S3薄膜;在Ag-Bi2S3的XRD衍射峰中出现AgBiS2相的衍射峰,表明Ag元素在Ag-Bi2S3薄膜中的存在形式为AgBiS2;UV-Vis DRS测试结果显示Bi2S3薄膜和Ag-Bi2S3薄膜的禁带宽度分别为1.65eV和1.47eV;Ag-Bi2S3薄膜的光电压和光电流分别为0.2013V和0.059mA/cm2,比Bi2S3薄膜的光电压和光电流分别提高了30.6%与168.1%;Ag-Bi2S3的载流子浓度4.83×1014cm-3,比Bi2S3的8.17×1012cm-3提升了两个数量级。

Abstract

The Ag+ doped Bi2S3 film (Ag-Bi2S3) was prepared on the FTO substrate by continuous ion deposition method and hydrothermal method.The influence of Ag+ doping concentration on the photoelectric performance of Bi2S3 film was explored.it was characterized by SEM,EDS,XRD,UV-Vis and other means.The results shown that in the SEM image of the Ag-Bi2S3 thin film,there were locally flower braids belt by the aggregation of shorter strip crystals,and the peak of Ag element appeared in the EDS spectrum,indicating that Ag+ was successfully doped into the Bi2S3 thin film.AgBiS2 diffraction peaks for XRD appeared in the Ag-Bi2S3 phase diffraction peaks,indicating that the Ag element in the Ag-Bi2S3 film was AgBiS2.The UV-Vis DRS test results shown that the band gaps of the Bi2S3 film and the Ag-Bi2S3 film were 1.65eV and 1.47eV,respectively.The photovoltage and photocurrent of the Ag-Bi2S3 film were 0.2013V and 0.059mA/cm2,respectively,which were 30.6% and 168.1% higher than those of the Bi2S3 film.The carrier concentration of Ag-Bi2S3 was 4.83×1014 cm-3,which was two orders of magnitude higher than the 8.17×1012cm-3 of Bi2S3.

关键词

银掺杂 / 硫化铋 / 光电性能

Key words

Ag-doping / bismuth sulfide / photoelectric property

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Ag元素掺杂Bi2S3薄膜的制备及其光电性能研究[J]. 化工新型材料, 2022, 50(8): 100-105 DOI:10.19817/j.cnki.issn1006-3536.2022.08.019

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基金资助

国家自然科学基金(61765005,61264007)

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