采用磁控溅射法低温下在硅衬底上制备了荧光碳化硅(SiC)纳米薄膜,研究了不同沉积温度下SiC纳米薄膜的微观结构、成分和光学性能。结果表明:沉积温度25～300℃条件下,SiC纳米薄膜的平均厚度介于3.5～7.7nm之间,硅、碳和氧是薄膜的主要成分。沉积温度为200℃时,SiC纳米薄膜具有最优的光致发光性能,薄膜的发光机理是SiO2的氧缺陷和SiC的本征发光。与沉积温度300℃制备的SiC纳米薄膜样品相比,沉积温度200℃制备的SiC纳米薄膜样品的荧光绝对量子产率增强至12.71倍。磁控溅射法低温制备的SiC纳米薄膜在紫外探测领域具有潜在的应用前景。
Fluorescent silicon carbide (SiC) nanofilms were prepared on silicon substrate by magnetron sputtering at low temperature.The microstructure,chemical composition and optical properties of the nanofilms at different deposition temperature were investigated.The results showed that the average thickness of the nanofilms were between 3.5nm and 7.7nm with deposition temperature from 25℃ to 300℃.The main elements of the nanofilms were silicon,carbon and oxygen.At the deposition temperature of 200℃,the nanofilms had the best photoluminescence performance.The luminescent mechanism of the nanofilms were the luminescence of oxygen defected in SiO2 and the intrinsic luminescence of SiC.The absolute fluorescence quantum yield of the nanofilms deposited at temperature of 200℃ was improved to 12.71 times than that of the nanofilms deposited at temperature of 300℃.The SiC nanofilms prepared by magnetron sputtering at low temperature had promising applications in ultraviolet detection.
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基金资助
国家自然科学基金(11747133);中央高校基本科研业务费专项资金(195209019)
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