氧化锌作为一种优异的半导体材料,在材料研究领域受到广泛关注。采用简单的湿化学法合成氧化锌材料,通过X射线衍射图观测到合成的氧化锌样品纯度高且没有第二相,在NaBH4的作用下,氧化锌的形貌以及内部结构发生了改变。带隙能量值从3.28eV降低到3.07eV,并通过拉曼光谱,X射线光电子能谱进一步验证,与纯氧化锌相比,经处理后的氧化锌,氧空位有所增加,揭示了NaBH4对氧化锌缺陷结构的影响。
As an excellent semiconductor material,zinc oxide has received extensive attention in the field of materials research.The zinc oxide material was synthesized by a simple wet chemical method.Through the X-ray diffraction pattern,it was observed that the sample had high purity and no second phase appeared.Under the influence of sodium borohydride(NaBH4),the morphology and internal structure of zinc oxide were changed.The band gap energy value was reduced from 3.28eV to 3.07eV.This change was further verified by Raman spectroscopy and X-ray photoelectron spectroscopy.Compared with pure zinc oxide,zinc oxide treated with NaBH4 increased oxygen vacancies.This study revealed the influence of NaBH4 on the structure of zinc oxide defects.
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基金资助
江苏省研究生科研与实践创新计划(KYCX20-2566)
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