A series of PLZT(x/65/35) uniform composition thin films and PLZT compositional gradient thin films were obtained by chemical solution decomposition (CSD) method.The influences of La doping on the ferroelectric property of PLZT compositional thin films were investigated.The PLZT uniform composition thin films and gradient thin films displayed the pure perovskite phase,the PLZT-123 gradient thin films displayed better crystallization properties in (111) orientation than the PLZT (2/65/35) uniform composition thin films.The film had densely uniform grains,and its structure was crack-free and compact.The interface was very sharp,and the films had a uniform thickness of 400nm approximately.When the La content was 2%,the PLZT (2/65/35) and PLZT-123 will have the excellent ferroelectric property,the Pr values of two kinds of thin films were 36.65 and 40.47μC/cm2.It was clear that the La content played an important role for the ferroelectric property of PLZT thin films.When the La content was low,the PLZT thin films will have the excellent ferroelectric property,and the gradient thin films had the better ferroelectric property than uniform composition thin films.
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