Research progress on preparation methods and dielectric properties of high dielectric constant La<sub>2</sub>O<sub>3</sub> materials

Wei Xiaoru, Chen Wenjie, Wang Feng, Zhu Shengli

doi:10.19817/j.cnki.issn1006-3536.2024.06.022

New Chemical Materials >

2024 , Vol. 52 >Issue 6: 33 - 37

DOI: https://doi.org/10.19817/j.cnki.issn1006-3536.2024.06.022

Research progress on preparation methods and dielectric properties of high dielectric constant La₂O₃ materials

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1. College of Materials Science and Engineering, Lanzhou Jiaotong University, Lanzhou 730070;
2. College of Chemical Engineering and Materials, Quanzhou Normal University, Quanzhou 362000;
3. College of Materials Science and Engineering, Tianjin University, Tianjin 300350;
4. College of New materials and Footwear and Clothing Engineering, Liming Vocational University, Quanzhou 362000

Received date: 2023-02-21

Revised date: 2024-02-01

Online published: 2024-06-18

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Abstract

Among many high dielectric constant gate dielectric materials,La₂O₃ possesses the characteristics of large band gap and good thermal stability,and has the potential to replace the traditional SiO₂ gate dielectric.In this paper,the preparation methods of La₂O₃ thin films were introduced,and the current approaches to improve the dielectric properties of La₂O₃ films were reviewed.In the end,the future development of La₂O₃ was prospected.

Key words： high dielectric constant dielectric material; La₂O₃; electrical properties; preparation methods

Cite this article

Wei Xiaoru, Chen Wenjie, Wang Feng, Zhu Shengli . Research progress on preparation methods and dielectric properties of high dielectric constant La₂O₃ materials[J]. New Chemical Materials, 2024 , 52(6) : 33 -37 . DOI: 10.19817/j.cnki.issn1006-3536.2024.06.022

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