石墨烯由于其优异的物理和化学性质,在材料和纳米器件等领域受到了极大的关注。但通过转移法转移的石墨烯在石墨烯基纳米器件上会引入杂质和缺陷,因此,直接在氧化硅上生长高质量的石墨烯成了一项迫切的需求。基于传统的热壁化学气相沉积(CVD)系统,设计了一种新的绝缘衬底生长系统,通过附加微波等离子体单元来提供额外的蚀刻和辅助效果,成为微波等离子体蚀刻和辅助CVD(MPEE-CVD)。利用此系统,成功地实现了在氧化硅和其他绝缘衬底上直接生成可控尺寸的石墨烯薄膜,并通过拉曼光谱和扫描电子显微镜表征了晶体质量。该项工作为进一步改善基于石墨烯的场效应晶体管纳米器件的性能开辟了新的道路。同时,它为在绝缘衬底上直接生长其他二维材料提供了可能的指引。
Graphene has attracted numerous attentions from materials communities and nano-device industries due novel physical and chemical properties in recent years.Considering to introduced impurities and defects in the interface of most graphene-based nanodevice by transfer methods,it has been an essential task to directly synthesize wafer-sized high-quality graphene films on the silicon oxide.Based on the traditional hot-wall chemical vapor deposition (CVD) system,a new isolated-substrate growth system was designed via affiliating added a microwave-plasma unit for providing additional etching and enhancing effects,called microwave-plasma etching and enhancing CVD (MPEE-CVD).By utilizing this MPEE-CVD system,the direct synthesis of controllable-sized graphene films on silicon oxide and other isolated substrates was successfully realized,whose crystal qualities was characterized by raman spectroscopy and scanning electron microscopy.The way of further improving the performance of graphene-based field-effect transistor nanodevices was opened.Meanwhile,it provided a possible guidance to directly grow other advanced two-dimensional materials on the isolated substrates to meet industrial requirements.
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基金资助
福建省自然科学基金(2018J01416);福建省中青年教师教育科研项目(JAT170331)
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