化工新型材料

化工新型材料 ›› 2018, Vol. 46 ›› Issue (5) : 56-59.

新材料与新技术

原位合成法制备Ni/Fe共掺杂g-C₃N₄及其光催化性能研究

作者信息 +

In-situ synthesis of iron/nickel co-doped g-C₃N₄ catalyst with enhanced performance

Cong Xianling, Ge Bo, Zhao Limin, Li Wenzhi

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文章历史 +

Received		Published
2018-02-11		2018-05-20
Issue Date	Revised Date
2018-07-03	2018-02-11

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摘要

以三聚氰胺、硝酸铁和硝酸镍为原料,采用一锅法原位制备了一系列Ni和Fe共掺杂的g-C₃N₄(Ni/Fe-C₃N₄)材料。采用X射线粉末衍射和扫描电子显微镜表征了材料的形貌与结构,采用X射线光电子能谱分析了掺杂离子的化学状态,采用紫外-可见漫反射光谱和光致发光光谱进一步分析了Ni/Fe-C₃N₄的半导体性质。结果表明:所制备的复合材料与纯g-C₃N₄相比具有大的比表面积,Ni/Fe掺杂降低了g-C₃N₄的带隙宽度,抑制了光生电子-空穴对的复合,有效提高了其对甲基橙的光催化降解效率。

Abstract

A series of Ni and Fe co-doped graphitic carbon nitride (Ni/Fe-C₃N₄) photocatalysts were successfully prepared by using Fe(NO₃)₃·9H₂O,Ni(NO₃)₃·6H₂O,and melamine as precursors.X-ray powder diffraction (XRD) and scanning electron microscopy (SEM) were used to confirm the morphology and structure of Ni/Fe-C₃N₄.X-ray photoelectron spectroscopy (XPS) was used to identify the chemical state of doping ion.UV-Vis diffuse reflectance spectroscopy (DRS) and photoluminescence spectrum (PL) were used to further analysis the semiconducting properties of Ni/Fe-C₃N₄.The results showed that the co-doping of Ni and Fe increased the surface area of g-C₃N₄,decreased the semiconductor band gap and reduced the recombination rate of electrons-holes effectively.

关键词

光催化 / 类石墨相氮化碳 / 铁镍共掺杂

Key words

phtocatalysis / graphitic carbon nitride / Ni and Fe co-doping

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原位合成法制备Ni/Fe共掺杂g-C₃N₄及其光催化性能研究[J]. 化工新型材料, 2018, 46(5): 56-59 DOI:

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