通过硅烷偶联剂(KH550)同步还原和改性氧化石墨烯(GO)制备得到高导电性能的石墨烯纳米片(r-GO),随后将得到的r-GO与聚碳酸酯(PC)复合,制备出高电导率的导电纳米复合材料(PC/r-GO)。通过X射线光电子能谱、X射线衍射和热失重分析对r-GO的结构进行表征。结果表明:KH550通过氨基修饰到石墨烯的表面,增加了r-GO与PC之间的相容性,并改善了r-GO在PC基体中的分散性,因此得到的导电纳米复合材料具有低的逾渗阈值(～0.34%,体积分数)。
Simultaneously functionalization and reduction of graphene oxide (GO) was developed by simple refluxing of GO with silane coupling agent KH550 without adding other reducing agent.The structure of obtained reduced GO(r-GO) was characterized by X-ray photoelectron spectroscopy,X-ray diffraction and thermogravimetric Analysis.The results indicated that KH550 was functionalized on the surface of GO by the nucleophilic substitution reaction between amine groups of PPD and epoxide groups of GO.Additionally,after the incorporation of r-GO in polycarbonate (PC),PC/r-GO exhibited a sharp transition from electrically insulating to conducting behaviour with a low percolation threshold of ～0.34% (volume fraction),which was attributed to the improved dispersion and the reduction of r-GO.
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基金资助
国家自然科学基金青年基金(11405168和11505011)
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