磁控溅射制备碲化铋基热电薄膜及器件研究进展

高远1,2, 夏鑫1,2*

化工新型材料 ›› 2026, Vol. 54 ›› Issue (8) : 38 -42.

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化工新型材料 ›› 2026, Vol. 54 ›› Issue (8) : 38-42. DOI: 10.19817/j.cnki.issn1006-3536.2026.08.013
综述与专论

磁控溅射制备碲化铋基热电薄膜及器件研究进展

    高远1,2, 夏鑫1,2*
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Research advances in magnetron-sputtered bismuth telluride-based thermoelectric thin films and devices

  • Gao Yuan1,2, Xia Xin1,2
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摘要

热电转换技术为实现余热回收与固态制冷提供了有效方案。磁控溅射技术具有沉积速率快、薄膜均匀性好、附着力强以及易于实现大面积制备等优势,该技术特别适用于制备高质量碲化铋薄膜,制备的热电器件实现了电热性能与结构灵活性之间的平衡。综述了溅射功率、溅射时间、工作气压这3个核心因素对溅射碲化铋基材料的影响,归纳了元素掺杂、杂化、退火处理等优化磁控溅射碲化铋薄膜性能的策略,总结了基于磁控溅射碲化铋薄膜的刚性和柔性热电器件的研究进展,指出了磁控溅射碲化铋基热电薄膜和热电器件面临的挑战,并展望了其未来的发展前景。

Abstract

Thermoelectric conversion technology provides an effective solution for waste heat recovery and solid-state cooling.Magnetron sputtering offers advantages such as high deposition rate,good film uniformity,strong adhesion,and ease of large-area fabrication,making it particularly suitable for the preparation of high-quality bismuth telluride thin films.Thermoelectric devices fabricated by this technique achieve a favorable balance between electrothermal performance and structural flexibility.This work reviewed the effects of three key factors—sputtering power,sputtering time and working pressure—on sputtered bismuth telluride-based materials.It summarized strategies for optimizing the performance of magnetron-sputtered bismuth telluride thin films,including elemental doping,hybridization,and annealing treatments.It also outlined recent research progress on rigid and flexible thermoelectric devices based on magnetron-sputtered bismuth telluride thin films.Finally,it discussed the challenges faced by magnetron-sputtered bismuth telluride-based thermoelectric thin films and devices and outlined their future development prospects.

关键词

磁控溅射 / 碲化铋基热电薄膜 / 核心影响 / 性能优化 / 热电器件

Key words

magnetron sputtering / bismuth telluride-based thermoelectric thin films / critical factors / property optimization / thermoelectric devices

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磁控溅射制备碲化铋基热电薄膜及器件研究进展[J]. 化工新型材料, 2026, 54(8): 38-42 DOI:10.19817/j.cnki.issn1006-3536.2026.08.013

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基金资助

国家自然科学基金项目(52263024);“天山英才”科研项目(2023TSYCLJ0008)

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