将原料硅、石墨、溶剂与刻蚀液按一定方式混合对硅进行化学刻蚀制备多孔硅。采用X射线衍射、扫描电镜、BET比表面积测试和电化学测试等手段对产物进行表征。结果表明:在相同的实验条件下,添加石墨比未添加石墨刻蚀的多孔硅刻蚀得更加充分,多孔硅表面的孔洞分布均匀且密集。电化学性能方面与未经刻蚀的纯硅相比,石墨辅助刻蚀制备的多孔硅首次可逆容量2221.7mAh/g;在200mA/g电流密度下50次循环后,容量为524.7mAh/g,容量保持率为23.6%,表明刻蚀后的多孔硅在可逆容量和循环性能方面都较未经刻蚀的硅有明显提升。
Porous silicon was synthesized via a graphite-assisted chemical etching process,wherein silicon powder,graphite,solvent,and etching solution were mixed in a defined manner to etch.The obtained materials were characterized by X-ray diffraction (XRD),scanning electron microscopy (SEM),Brunauer-Emmett-Teller (BET) surface area analysis,and electrochemical measurements.The results indicated that,under identical experimental conditions,the presence of graphite significantly enhanced the etching efficiency compared to the graphite-free process.The resulting porous silicon exhibited a more uniform and densely distributed pore structure.Electrochemical tests revealed that the porous silicon prepared with graphite assistance delivered an initial reversible capacity of 2221.7mAh/g.After 50 cycles at a current density of 200mA/g,a specific capacity of 524.7mAh/g was retained,corresponding to a capacity retention of 23.6%.These findings suggested that graphite-assisted etching effectively improved both the reversible capacity and cycling stability of silicon anodes compared to unetched silicon.
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基金资助
内蒙古自治区自然科学基金项目(2023LHMS02019);内蒙古自治区高校基本科研业务费项目(JY20240032);“英才兴蒙”工程团队一层次-煤基固废高值化利用创新团队资助(2025TYL04)
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