化工新型材料

化工新型材料 ›› 2026, Vol. 54 ›› Issue (2) : 125-129. DOI: 10.19817/j.cnki.issn1006-3536.2026.02.005

新材料与新技术

射频磁控溅射法制备MoS₂纳米薄膜的电学性能研究

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Study on electrical properties of MoS₂ nanofilms prepared by RF magnetron sputtering

Xing Shuhan, Zhang Junfeng, Fan Zhiqin

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Received		Published
2025-01-19		2026-02-20
Issue Date	Revised Date
2026-02-12	2025-01-19

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摘要

采用射频磁控溅射法在石英玻璃衬底上沉积厚度不同的MoS₂纳米薄膜,利用霍尔效应测试系统研究了MoS₂纳米薄膜的电阻率、霍尔系数、霍尔迁移率和载流子浓度等电学性能。结果表明:制备的MoS₂纳米薄膜电阻率较小,并且薄膜越厚电阻率越小;薄膜的霍尔系数具有各向异性,且越厚的薄膜霍尔系数相对较大;随着薄膜厚度的增加,薄膜霍尔迁移率无规律变化,最厚薄膜的霍尔迁移率最大;载流子浓度随着溅射时间的增加而降低;载流子浓度是决定MoS₂纳米薄膜电学性质的关键因素,而载流子浓度可通过优化溅射参数进行调控。

Abstract

MoS₂ nanofilms of different thicknesses were deposited on quartz glass substrates by the radio-frequency (RF) magnetron sputtering method.The electrical properties of MoS₂ nanofilms,including resistivity,Hall coefficient,Hall mobility and carrier concentration,were investigated by using Hall effect measurement system.The results showed that the resistivity of the prepared MoS₂ nanofilm was small,and the thicker the nanofilm,the smaller the resistivity.The Hall coefficient of the nanofilm was anisotropic,with thicker nanofilm exhibiting relatively higher Hall coefficient.As the nanofilm thickness increased,the Hall mobility changed irregularly,with the thickest nanofilm demonstrating the highest Hall mobility.The carrier concentration decreased with the increase of sputtering time.The carrier concentration was the key factor determining the electrical properties of MoS₂ nanofilms,and the carrier concentration could be adjusted by optimizing the sputtering parameters.

关键词

MoS₂纳米薄膜 / 射频磁控溅射 / 霍尔系数 / 霍尔迁移率 / 载流子浓度

Key words

MoS₂ nanofilms / RF magnetron sputtering / Hall coefficient / Hall mobility / carrier concentration

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射频磁控溅射法制备MoS₂纳米薄膜的电学性能研究[J]. 化工新型材料, 2026, 54(2): 125-129 DOI:10.19817/j.cnki.issn1006-3536.2026.02.005

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参考文献

原文顺序 | 出版日期 | 本文引用

[1] Wang K P,Wang J,Fan J T,et al.Ultrafast saturable absorption of two-dimensional MoS₂ nanosheets[J].ACS Nano,2013,7(10):9260-9267.
[2] Liu Y,Weiss N O,Duan X,et al.Van der Waals heterostructures and devices[J].Nature Reviews Materials,2016,1:16042.
[3] Chen L X,Wang H M,Tang S J,et al.Edge control of graphene domains grown on hexagonal boron nitride[J].Nanoscale,2017,9(32):11475-11479.
[4] Tiwari P,Jaiswal J,Chandra R.Optical and electrical tunability in vertically aligned MoS₂ thin films prepared by DC sputtering:role of film thickness[J].Vacuum,2022,198:110903.
[5] Zhou K Q,Gao R,Qian X D.Self-assembly of exfoliated molybdenum disulfide (MoS₂) nanosheets and layered double hydroxide (LDH):towards reducing fire hazards of epoxy[J].Journal of Hazardous Materials,2017,338:343-355.
[6] Cho K,Pak J,Chung S,et al.Recent advances in interface engineering of transition-metal dichalcogenides with organic molecules and polymers[J].ACS Nano,2019,13(9):9713-9734.
[7] Gunda R K,Narala S K R.Evaluation of friction and wear characteristics of electrostatic solid lubricant at different sli-ding conditions[J].Surface & Coatings Technology,2017,332:341-350.
[8] Kim B H,Yoon H J,Kwon S H,et al.Direct WS₂ photodetector fabrication on a flexible substrate[J].Vacuum,2021,184:109950.
[9] Chen B,Meng Y H,Sha J W,et al.Preparation of MoS₂/TiO₂ based nanocomposites for photocatalysis and rechargeable batteries:progress,challenges,and perspective[J].Nanoscale,2018,10(1):34-68.
[10] Barzegar M,Zad A I,Tiwari A.On the performance of vertical MoS₂ nanoflakes as a gas sensor[J].Vacuum,2019,167:90-97.
[11] Lukaszkowicz K,Kubacki J,Balin K,et al.Characteristics of CrAlSiN+MoS₂ coating deposited by cathodic arc and magnetron sputtering process[J].Vacuum,2019,163:360-367.
[12] Liu X,Ma G J,Sun G,et al.MoS_x-Ta composite coatings on steel by d.c magnetron sputtering[J].Vacuum,2013,89:203-208.
[13] Gruber W,Hadjiamini Najafabadi H,Geckle U,et al.Crystallisation of magnetron sputtered amorphous Si_1-xC_xfilms (x=1/3) studied by grazing incidence X-ray diffractometry[J].Philosophical Magazine,2010,90(29):3855-3865.
[14] 樊志琴,邢淑涵,李瑞,等.射频磁控溅射法制备MoS₂纳米薄膜的光学性能研究[J].化工新型材料,2025,53(2):131-134.
[15] Addou R,Mcdonnell S,Barrera D,et al.Impurities and electronic property variations of natural MoS₂ crystal surfaces[J].ACS Nano,2015,9(9):9124-9133.
[16] Benitez L A,Sierra J F,Torres W S,et al.Strongly anisotropic spin relaxation in graphene-transition metal dichalcogenide heterostructures at room temperature[J].Nature Physics,2018,14(3):303-307.
[17] Chen Q,Li L L,Peeters F M.Magnetic field dependence of electronic properties of MoS₂ quantum dots with different edges[J].Physical Review B,2018,97:85437.
[18] Lee H S,Baik S S,Lee K,et al.Metal semiconductor field-effect transistor with MoS₂/conducting NiO_x van der Waals Schottky interface for intrinsic high mobility and photoswitching speed[J].ACS Nano,2015,9(8):8312-8320.