对近10年来纳米颗粒嵌入型阻变存储器(RRAM)的性能和电阻的转换机制进行了综述。在RRAM器件的电阻转换层中嵌入纳米颗粒能够有效地改善或提升器件的性能。首先,电阻转换层中的金属纳米颗粒作为电荷捕获和释放的场所,增强局域电场,促进氧离子迁移,促使氧空位缺陷沿着最短路径形成导电通道;其次,在纳米颗粒组装层中,纳米颗粒之间存在着边界,这些边界为导电细丝的形成提供了便利;第三,插入到介质层中的纳米颗粒引导导电细丝的形成和断开,并通过减小导电细丝形成的随机性,改善了器件电阻转变的均匀性和稳定性。因此,从阻变存储器的结构、组成和电阻转换机理进行了论述,总结了将金属或金属氧化物纳米颗粒嵌入介质层中对器件电阻转变性能的影响,最后,展望了纳米颗粒嵌入型阻变存储器的发展趋势和应用潜力。
The performance and resistive switching mechanisms of nanoparticles-embedded resistive random access memory (RRAM) devices over the past decade were reviewed.Embedding nanoparticles in the resistance switching layer of RRAM devices could effectively improve or enhance the performance of the devices.Firstly,the metal nanoparticles in the resistance switching layer,acting as sites for charge trapping and release,effectively enhanced the local electric field,highly promoted oxygen ion migration,and prompted the oxygen vacancy defects to form conductive channels along the shortest path.Secondly,in the nanoparticle assembly layer,there were plenty of boundaries between the nanoparticles,which facilitated the formation of conductive filaments.Thirdly,nanoparticles inserted into the dielectric layer guided the formation and rupture of the conductive filaments,and improved the uniformity and stability of the resistive switching behaviors by reducing the randomness of the formation and rupture of the conductive filaments.Therefore,the structure,composition and resistive switching mechanism of RRAM devices were discussed.The effects of metal or metal oxide nanoparticles embedded in dielectric layer on the resistive switching performance of RRAM device were summarized.Finally,the development trend and application potential of nanoparticles-embedded RRAM devices were prospected.
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基金资助
国家自然科学基金地区项目(22261043);内蒙古自然科学基金青年项目(2022QN02016);内蒙古自治区高等学校科学技术研究自然科学重点项目(NJZZ22461);内蒙古民族大学博士启动基金项目(BS456)
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