D314树脂的β-Ala改性及其对镓离子的吸附性能研究

刘馥瑶1, 王雪莲1, 石敏感1, 冯晓琴1, 安富强1,2*

化工新型材料 ›› 2024, Vol. 52 ›› Issue (12) : 170 -174.

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化工新型材料 ›› 2024, Vol. 52 ›› Issue (12) : 170-174. DOI: 10.19817/j.cnki.issn1006-3536.2024.12.048
科学研究

D314树脂的β-Ala改性及其对镓离子的吸附性能研究

    刘馥瑶1, 王雪莲1, 石敏感1, 冯晓琴1, 安富强1,2*
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Study on β-Ala modification of D314 resin and its adsorption properties for Gallium ions

  • Liu Fuyao1, Wang Xuelian1, Shi Mingan1, Feng Xiaoqin1, An Fuqiang1,2
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摘要

随着科技的发展,镓在半导体、医疗、催化等领域占有越来越重要的地位,但由于其在自然界中无独立矿床可提取,使对镓的回收逐渐成为人们关注的重点。针对上述问题提出一种新型吸附剂的研究方法,利用β-Ala中的羧基可与Ga(Ⅲ)之间形成配位作用,首先在D314树脂表面接枝聚合了甲基丙烯酸缩水甘油酯(GMA),再用β-丙氨酸进行改性,制得新型吸附剂β-AlaD314。研究了改性条件对吸附量的影响,并考察了改性树脂对Ga(Ⅲ)的吸附性能。结果表明:β-AlaD314最佳适宜的改性条件为β-丙氨酸用量2g,反应温度60℃,反应时间8h;在25℃,pH为2的环境下,β-AlaD314对Ga(Ⅲ)的饱和吸附量为321.07mg/g,符合准一级动力学模型;此外,β-AlaD314具有良好的重复使用性能。

Abstract

With the development of science and technology,gallium plays a more and more important role in semiconductor,medical,catalysis and other fields.However,because there is no independent deposit in nature to extract gallium,the recovery of gallium has gradually become the focus of attention.To address this issue,a new adsorbent research method was proposed.The carboxyl group in β-Ala was used to form a coordination with Ga(Ⅲ).Glycidyl methacrylate (GMA) was grafted on the surface of D314 resin,and then modified with β-alanine to prepare a new adsorbent β-AlaD314.The effect of modification conditions on the adsorption capacity was studied,and the adsorption properties of the modified resin for Ga(Ⅲ) were investigated.It was found that the optimum modification conditions of β-AlaD314 were β-alanine dosage of 2g,reaction temperature of 60℃ and reaction time of 8h.At 25℃ and pH 2,the saturation adsorption capacity of β-AlaD314 for Ga (Ⅲ) was 321.07mg/g,which accorded with the quasi-first-order kinetic model.In addition,β-AlaD314 had good reuse performance.

关键词

/ 吸附 / D314树脂 / β-丙氨酸 / 改性

Key words

gallium / adsorption / D314 resin / β-alanine / modification

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D314树脂的β-Ala改性及其对镓离子的吸附性能研究[J]. 化工新型材料, 2024, 52(12): 170-174 DOI:10.19817/j.cnki.issn1006-3536.2024.12.048

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基金资助

中央引导地方科技发展基金项目资助YDZX20201400001975

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