Among many high dielectric constant gate dielectric materials,La2O3 possesses the characteristics of large band gap and good thermal stability,and has the potential to replace the traditional SiO2 gate dielectric.In this paper,the preparation methods of La2O3 thin films were introduced,and the current approaches to improve the dielectric properties of La2O3 films were reviewed.In the end,the future development of La2O3 was prospected.
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基金资助
福建省科技重大专项专题项目(2021HZ021027);福建省自然科学基金(2020J01776);省级科技创新重点项目(2021G02028)
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