以氟晶云母片为衬底,进行柔性ZnO透明导电薄膜(Mica/ZnO)的制备与表征。利用XRD和SEM表征可知,晶种水热法比直接水热法更有利于制备Mica/ZnO薄膜。研究发现,晶种水热法制备Mica/ZnO薄膜分为颗粒状ZnO晶体生长阶段、颗粒状ZnO晶体成长为棒状ZnO晶体阶段和棒状ZnO晶体成长三个阶段。采用晶种水热法制备Mica/ZnO薄膜适宜的晶化时间为26h,制备的致密棒状ZnO晶体长度约500nm左右。制备的Mica/ZnO薄膜可耐500℃以上的高温,为研究耐高温柔性ZnO透明导电薄膜提供更为丰富的柔性衬底材料和制备方法。
Transparent flexible ZnO conductive thin films (Mica/ZnO) were prepared on Mica substrates and characterized by XRD and SEM.It was found that the seed hydrothermal method was more conducive to the preparation of Mica/ZnO thin films than the direct hydrothermal method.The results showed that Mica/ZnO thin film prepared by seed hydrothermal method was divided into three stages:the granular ZnO crystal growth stage,the ZnO crystal transition stage from granular to rod and the rod ZnO crystal growth stage.The suitable crystallization time of Mica/ZnO thin film prepared by seed hydrothermal method was 26h,and the length of dense rod ZnO crystal was about 500nm.The Mica/ZnO thin films had high temperature resistance above 500 ℃,which provided more flexible substrate materials and preparation methods for the study of transparent high temperature resistance flexible ZnO conductive thin films.
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基金资助
宜春市秀江人才培养计划(宜财教指[2019]197号)
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