化工新型材料

化工新型材料 ›› 2023, Vol. 51 ›› Issue (3) : 110-114. DOI: 10.19817/j.cnki.issn1006-3536.2023.03.020

新材料与新技术

CdIn₂S₄光电薄膜材料的制备及光电性能研究

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Study on the preparation and photoelectric properties of CdIn₂S₄ thin film materials

Li Gege^1,2, Du Wenjing², Jia Huimin², Zheng Zhi²

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Received		Published
2022-09-26		2023-03-20
Issue Date	Revised Date
2023-03-29	2022-09-26

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摘要

以氯化镉(CdCl₂·2.5H₂O)、氯化铟(InCl₃·4H₂O)和硫代乙酰胺(TAA)为原料,利用水热法在FTO导电基底上制备CdIn₂S₄薄膜材料。利用X射线粉末衍射仪(XRD)、扫描电子显微镜(SEM)、高分辨透射电子显微镜(HRTEM)、紫外-可见漫反射光谱(UV-Vis)等手段对所得薄膜的物相结构、表面形貌、成分及光吸收性能等进行表征。借助瞬态表面光电压(TSPV)技术探究CdIn₂S₄薄膜的光生载流子的分离、传输及复合过程。结果表明:制备的CdIn₂S₄薄膜结晶良好、表面均匀平整且具有良好的光吸收性能和光电响应。构建了以CdIn₂S₄和P3HT为吸收层、TiO₂为电子传输层的异质结薄膜太阳能电池器件(FTO/TiO₂/CdIn₂S₄/P3HT/Au)。目前其光电转化效率最高为0.022%,光电性能有待进一步提高。

Abstract

CdIn₂S₄ thin film material was prepared by hydrothermal method on FTO conductive substrate using cadmium chloride (CdCl₂·2.5H₂O),indium chloride (InCl₃·4H₂O) and thioacetamide (TAA) as raw materials.The phase structure,surface morphology,composition and optical absorption properties of the obtained films were characterized by X-ray powder diffraction (XRD),scanning electron microscopy (SEM),high-resolution transmission electron microscopy (HRTEM) and UV-Vis diffuse reflectance spectroscopy (UV-Vis).Transient surface photovoltage (TSPV) technology was used to investigate the separation,transport and recombination of photogenerated carriers in CdIn₂S₄ films.The results showed that the CdIn₂S₄ films had good crystallization,uniform surface,good optical absorption performance and photoelectric response.A heterojunction thin-film solar cell device (FTO/TiO₂/CdIn₂S₄/P3HT/Au) with CdIn₂S₄ and P3HT as the absorption layer and TiO₂ as the electron transport layer was constructed.The highest photoelectric conversion efficiency was 0.022%,and the photoelectric performance needed to be further improved.

关键词

CdIn₂S₄ / 水热法 / 异质结 / 薄膜太阳能电池

Key words

CdIn₂S₄ / hydrothermal method / heterogeneous / thin film solar cell

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CdIn₂S₄光电薄膜材料的制备及光电性能研究[J]. 化工新型材料, 2023, 51(3): 110-114 DOI:10.19817/j.cnki.issn1006-3536.2023.03.020

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