There are lots of issues in the microstructure characterization of transmission electron microscope (TEM) cross section of two-dimensional porous Si/Al2O3/SiC film,such as film falling off easily,high brittleness,poor wear resistance,difficult preparation of selected area,low sample preparation efficiency and rate of success,etc.In this research,the characterization of porous Si/Al2O3/SiC film cross section was successfully carried out by focused ion beam (FIB).The results showed that the FIB technique was a method to characterize the TEM cross section of two-dimensional porous film with high-quality and effectively reduce the damages during preparation of TEM sample.
[1] 贺东葛,王家鹏,刘国敬.碳化硅半导体材料应用及发展前景[J].电子工业专用设备,2018,47(3):1-3.
[2] Neudeck P G,Okojie R S,Chen L Y.High-temperature electronics-a role for wide bandgap semiconductors?[J].P IEEE,2002,90(6):1065-1076.
[3] Nakamura T,Miura M,Kawamoto N,et al.Development of SiC diodes,power MOSFETs and intelligent power modules[J].Phys Status Solidi A,2009,206(10):2403-2416.
[4] Wang X K,Cooper J A.High-voltage n-channel IGBTs on free-standing 4H-SiC epilayers[J].IEEE T Electron Dev,2010,57(2):511-515.
[5] Morkoc H,Strite S,Gao G B,et al.Large-band-gap SiC,Ⅲ—Ⅴ nitride,and Ⅱ—Ⅵ ZnSe-based semiconductor device technologies[J].J Appl Phys,1994,76(3):1363-1398.
[6] He Z H,Li J L,Liu C H,et al.Structure and optical properties of porous SiC film grown by magnetron sputtering on porous anodic aluminium oxide template[J].Process Appl Ceram,2021,15(1):87-94.
[7] 陈琳.纳—微米低维度生长黄铁矿的微观组织结构研究[D].沈阳:东北大学,2011.
[8] 戴嘉维,孔明.薄膜截面的TEM样品制备[J].理化检验(物理分册),2006,42(5):239-241.
[9] 金乾进,柴青.聚焦离子束(FIB)直写技术研究[J].传感器世界,2017,23(3):12-15.
[10] 韩伟,肖思群.聚焦离子束(FIB)及其应用[J].中国材料进展,2013,32(12):716-727.
[11] 付琴琴,单智伟.FIB-SEM双束技术简介及其部分应用介绍[J].电子显微学报,2016,35(1):81-89.
基金资助
国家自然科学基金(11747133);中央高校基本科研业务费专项资金(195209019)
PDF
