采用分子自组装技术,以Si为基底,在3-氨基丙基三甲氧基硅烷(APTMS)的浓度为3mmol/L,组装温度为70℃的条件下,通过调控反应时间制备APTMS自组装单分子层扩散阻挡层。通过扫描电子显微镜(SEM)、原子力显微镜(AFM)、X射线光电子能谱(XPS)、四点弯曲测试及半导体分析仪对扩散阻挡层进行表征,并探究组装时间对自组装分子层形貌、结构和性能的影响。结果表明,APTMS以Si—O—Si键、C—C键、C—Si和C—N键为主,在组装时间为1h时,APTMS的成膜效果最佳,其表面粗糙度为0.160nm。APTMS自组装分子层的引入,使Cu/APTMS/SiO2/Si的漏电流从10-2A/cm2减小至10-5A/cm2,结合能增大至6.58±0.21J/m2。APTMS自组装分子层有效地抑制了Cu向Si基底的扩散,有较好的阻挡效果,提高了器件的可靠性。
By using molecular self-assembly technology,3-aminopropyltrimethoxysilane(APTMS) grew on the surface of Si substrates,the self-assembled molecular diffusion barrier was prepared by regulating reaction time at the concentration of 3mmol/L of APTMS and the assembly temperature of 70℃.The diffusion barrier was characterized by scanning electron microscope,atomic force microscope,X-ray photoelectron spectroscopy,four-point bending test and semiconductor analyzer.And the effect of assembly time on the performance of self-assembly molecular layers was investigated.The results showed that APTMS mainly consists of Si—O—Si bond,C—C bond,C—Si and C—N bond.When the assembly time was 1h,the film formation quality of APTMS was the best,and its surface roughness was 0.160nm.The introduction of APTMS self-assembly molecular layer reduced the leakage current of the device from 10-2A/cm2 to 10-5A/cm2,and increased the binding energy to 6.58±0.21J/m2.APTMS self-assembled molecular layer effectively inhibited the diffusion of Cu into Si substrate,and had a good blocking effect and improved the reliability of the device.
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