以Si粉和SiO2粉为硅源,活性炭为碳源,Fe2O3为添加剂,采用碳热还原法,在氢气保护下经1500℃保温3h烧制,研究了硅源种类对一维SiC纳米材料结构和发光性能的影响。结果表明,Si粉与活性炭的反应活性强于SiO2粉,易于制得发光性能较好的一维SiC纳米材料,其具有光滑的表面及无定形SiO2外壳包裹的核壳结构,并具有较宽的发射波长。因非晶态SiO2层的存在及一维SiC纳米材料内部结构缺陷的共同作用,其在467nm和435nm处的带隙较SiC体材料显示出较大的蓝移现象。
At the sintering temperature of 1500 ℃ for 3 h in hydrogen atmosphere,1D SiC nanomaterials were prepared with Si and SiO2 powers as Si source,activated carbon(AC) and Fe2O3 as the C source and additive,respectively.Effects of Si source types on microstructure and luminescence properties of 1D SiC were studied.Results showed that the reaction activity of Si with AC was stronger than that of SiO2.1D SiC with better luminescence properties were prepared easily,they had a smooth surface,a core-shell structure wrapped in amorphous SiO2 shell,and a wide emission wavelength.Compared with SiC bulk materialss,the band gaps at 467 nm and 435 nm showed large blue shifts due to the existence of amorphous SiO2 layer and structural defects of 1D SiC.
[1] 吴仁兵.形貌多元化SiC纳米材料生长、结构及其性能研究[D].杭州:浙江大学,2011:2-3.
[2] Li W F,Guo H S.A novel and green fabrication of 3C-SiC nanowires from coked rice husk silicon mixture and their photoluminescence property[J].Materials Letters,2018,215:75-78.
[3] 柴威,邓乾发,王羽寅,等.碳化硅陶瓷的应用现状[J].轻工机械,2012,30(4):117-120.
[4] Yakimova,Petoral,Yazdi,et al.Surface functionalization and biomedical applications based on SiC[J].Journal of Physics D:Applied Physics,2007,40(20):6435-6442.
[5] Yang T,Chang X W,Chen J H,et al.B-doped 3C-SiC nanowires with a finned microstructure for efficient visible light-driven photocatalytic hydrogen production[J].Nanoscale,2015,7(19):8955-8961.
[6] 郝雅娟,靳国强,郭向云.碳热还原制备不同形貌的碳化硅纳米线[J].无机化学学报,2006,22(10):1833-1837.
[7] 张颖,蒋明学,崔曦文,等.碳热还原法制备SiC晶须试验研究[J].西安建筑科技大学学报(自然科学版),2008,40(6):788-791.
[8] 王启宝,郭梦熊.β-SiC单晶晶须的生长及催化研究[J].高技术通讯,1996(10):41-45.
[9] Guo J Z,Zuo Y,Li Z J,et al.Preparation of SiC nanowires with fins by chemical vapor deposition[J].Physica E,2007,39(2):262-266.
[10] 郑敏,张蓬洲.化学气相沉积法制备碳化硅纤维[J].宇航材料工艺,1996,5:27-30.
[11] 赵松,史景利,魏兴海,等.静态化学气相沉积法制备SiC纤维的拉伸强度分布研究[J].化工新型材料,2012,40(12):117-120.
[12] Leu I C.Chemical vapor deposition of silicon carbide whiskers activated by elemental nickel[J].Journal of the Electrochemical Society,1999,146(1):184-188.
[13] Lodhe M,Selvam A,Udayakumar A,et al.Effect of polycarbosilane addition to a mixture of rice husk and coconut shell on SiC whisker growth[J].Ceramics International,2016,42(2):2393-2401.
[14] 刘军,冯春祥,宋永才,等.先驱体转化法制备碳化硅纤维[J].现代化工,2000,20(10):59-60.
[15] 冯春祥,薛金根,宋永才.SiC纤维研究进展[J].高科技纤维与应用,2003,28(1):15-19.
[16] Sacks M D,Scheiffele G W,Zhang L,et al.Polymer-derived SiC-based fibers with high tensile strength and improved creep resistance[J].Ceramic Engineering & Science Proceedings,2008,19(3):73-86.
[17] 万隆,李德意,刘文超,等.温度对碳热还原合成SiC晶须的影响[J].陶瓷学报,2001,22(4):220-223.
[18] 郝雅娟,郭向云.碳化硅纳米纤维的溶胶—凝胶法合成[J].功能材料,2004,35(1):002856-2858.
[19] 郝斌.SiC晶须制备方法研究进展[J].陶瓷,2010,9:11-13.
[20] Zhang J D,Chen J J,Xin L P,et al.Hierarchical 3C-SiC nanowires as stable photocatalyst for organic dye degradation under visible light irradiation[J].Materials Science and Engineering:B,2014,179(1):6-11.
[21] Zhang J,Li W,Jia Q L,et al.Molten salt assisted synthesis of 3C-SiC nanowire and its photoluminescence properties[J].Ceramics International,2015,41(10):12614-12620.
