作为半导体芯片、显示屏等制造工艺中重要的上游必备材料,光刻胶技术发展至关重要。基于文献计量研究方法探究光刻胶技术的现状及趋势发现,2003—2012年为日本重点企业光刻胶技术相关专利的申请高峰期,2013年后开始放缓,2017年以后下降明显。从专利技术分析看,日本重点企业近10年在光敏树脂组成与光阻层、薄膜材料、可溶性树脂与含碱材料、正性光刻胶以及复合物等方面持续布局。近5年则在光刻胶图案、掩膜版、固体滤光片和剥离剂等方面加强了布局。从论文分析看,基础技术研究主要围绕光刻胶新型材料、性能提升、加工技术创新以及高精度制造等方面。
As an important upstream essential material in the manufacturing process of semiconductor chips and display screens,the development of photoresist technology is vital.Based on the bibliometric research methods to explore the current status and trends of photoresist technology,it was found that the period from 2003 to 2012 was the peak period for patent applications related to photoresist technology by key Japanese enterprises.The pace slowed down after 2013,and there was a noticeable decline after 2017.From the perspective of patent technology analysis,Japan's key enterprises have continued to deploy in photosensitive resin composition and photoresist layer,thin film materials,soluble resins and alkali-containing materials,positive photoresists and composites in the past ten years.In the past five years,they have strengthened their layout in photoresist patterns,masks,solid filters and strippers.According to the analysis of the papers,the basic technology research mainly focuses on new photoresist materials,performance improvement,processing technology innovation and high-precision manufacturing.
[1] 刘巧云,祁秀秀,杨怡,等.光刻胶材料的研究进展[J].微纳电子技术,2023,60(3):378-384.
[2] 陈颖,黄润坤,吴頔,等.全球光刻胶产业现状及布局[J].中国集成电路,2023,32(5):22-26,65.
[3] 王静静.基于论文和专利的技术机会分析[D].北京:北京工业大学,2016.
[4] Shin-Etsu Chemical Co.Ltd.Positive resist material and pattern formation method using the same,US7651829B2[P].2010-01-26.
[5] Shin Etsu Chemical Co Ltd.Naphthalene derivative,resist bottom layer material,and patterning process,US9045587B2[P].2015-06-02.
[6] Sumitomo Chemical Company Limited.Compound,resin,resist composition and method for producing resist pattern,US8431325B2[P].2013-04-30.
[7] Shin-Etsu Chemical Company Limited.A pattern formation method and a negative resist composition,JP05708082B2[P].2015-04-30.
[8] Tokyo Ohka Kogyo Company Limited.The resist protective film formation material for liquid immersion exposure processes,and the resist pattern formation method using this protective film,JP05301070B2[P].2013-09-25.
[9] Sumitomo Chemical Company Limited.Photoresist composition,JP05012073B2[P].2012-08-29.
[10] Shin-Etsu Chemical Company Limited.Resist lower layer film|membrane material and a pattern formation method,JP03981030B2[P].2007-09-26.
[11] JSR Corporation.The manufacturing method and compound of a board|substrate in which the composition for film formation,the film|membrane,and the pattern were formed,JP06264246B2[P].2018-01-24.
[12] International Business Machines Corporation,JSR Corporation.Photodecomposable bases and photoresist compositions,US8614047B2[P].2013-12-24.
[13] Fujifilm Corporation.Method for high resolution patterning of organic layers,US10862036B2[P].2020-12-08.
