化工新型材料

化工新型材料 ›› 2019, Vol. 47 ›› Issue (7) : 241-243.

开发与应用

MoS₂基复合结构的合成及半导体器件应用新进展

^1,2*

作者信息 +

Research progress in synthesis of MoS₂-based complex structure and its application for semiconductor device

Guan Renquan¹, Zhai Hongju^1,2, Sun Dewu², Wang Yan¹, Li Jiaxin¹

Author information +

文章历史 +

Received		Published
2018-06-01		2019-07-20
Issue Date	Revised Date
2019-08-05	2018-06-01

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摘要

MoS₂是典型过渡金属硫化物之一,其带隙能较窄,在半导体器件等方面具有极大的应用前景。MoS₂纳米材料作为理想的低功率半导体电子器件,在纳米集成电子或光子系统中有广泛应用。针对国内外最新研究情况,综述了MoS₂纳米复合材料的制备方法及其在半导体器件领域的最新应用研究进展,并探讨其未来发展方向。

Abstract

MoS₂ is one of the typical layered transition metal sulfur compounds with narrow band gap,which has a great application prospect in semiconductor device.As an ideal low power semiconductor electronic device,MoS₂ nano materials can be widely applied in nano integrated nanoelectronic/photonic systems.Considered of the latest research progress at home and abroad,the preparation of MoS₂-based nanocomposites and its application in semiconductor device were reviewed and the future development direction was discussed.

关键词

MoS₂ / 纳米复合材料 / 半导体器件

Key words

MoS₂ / nano-composite / semiconductor device

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MoS₂基复合结构的合成及半导体器件应用新进展[J]. 化工新型材料, 2019, 47(7): 241-243 DOI:

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参考文献

原文顺序 | 出版日期 | 本文引用

[1] Yi F,Ren M,Reed J,et al.Optomechanical enhancement of doubly resonant 2D optical nonlinearity[J].Nano Lett,2016,16(3):1631-1636.
[2] Su G,Hadjiev V,Loya P,et al.Chemical vapor deposition of thin crystals of layered semiconductor SnS₂ for fast photodetection application[J].Nano Lett,2015,15(1):506-513.
[3] Lee H,Baik S,Lee K,et al.Metal semiconductor field-effect transistor with MoS₂/Conducting NiO_x van der Waals Schottky interface for intrinsic high mobility and photoswitching speed[J].ACS Nano,2015,9(8):8312-8320.
[4] 袁文明.新颖半导体二硫化钼[J].半导体材料,2013,38(3):212-215.
[5] Chhowalla M,Shin H,Eda G,et al.The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets[J].Nat Chem,2013,5(4):263-275.
[6] Ye L,Xu H,Zhang D,et al.Synthesis of bilayer MoS₂ nanosheets by a facile hydrothermal method and their methyl orange adsorption capacity[J].Mater Res Bull,2014,55(7):221-228.
[7] Liu K,Zhang W,Lee Y,et al.Growth of large-area and highly crystalline MoS₂ thin layers on insulating substrates[J].Nano Lett,2012,12(3):1538-1544.
[8] Jin H,Hamza Z,Hyun K,et al.Photocurrent switching of monolayer MoS₂ using a metal-insulator transition[J].Nano Lett,2017,17(2):673-678.
[9] Foad G,Shams M.Sequential solvent exchange method for controlled exfoliation of MoS₂ suitable for phototransistor fabrication[J].ACS Appl Mater Interfaces,2016,8(45):31179-31191.
[10] Deng Y,Luo Z,Conrad N,et al.Black Phosphorus-monolayer MoS₂ van der Waals heterojunction p-n diode[J].ACS Nano,2014,8(8):8292-8299.
[11] Lin C,Zhu X,Tsai S,et al.Atomic-monolayer two-dimensional lateral quasi-heterojunction bipolar transistors with resonant tunneling phenomenon[J].ACS Nano,2017,11(11):11015-11023.
[12] Lee G,Pearton S,Ren F,et al.Two-dimensionally layered p-black phosphorus/n-MoS₂/p-black phosphorus heterojunctions[J].ACS Appl Mater Interfaces,2018,10(12):10347-10352.
[13] Zeng Z,Yin Z,Huang X,et al.Single-layer semiconducting nanosheets:high-yield preparation and device fabrication[J].Angew Chem Inter Ed,2011,50(47):11093-11097.
[14] Khan M,Rathi S,Park J,et al.Junctionless diode enabled by self-bias effect of ion gel in single-layer MoS₂ device[J].ACS Appl Mater Interfaces,2017,9(32):26983-26989.
[15] Stefan W,Dmitry K P,Ole B,et al.A microprocessor based on a two-dimensional semiconductor[J].Nat Commun,2017,8:14948-14948.