纳米晶ZnS薄膜的制备方法及应用进展

杨扬1, 李刚1, 金克武2, 王天齐2, 彭赛奥2

化工新型材料 ›› 2019, Vol. 47 ›› Issue (5) : 51 -54.

PDF (1149KB)
化工新型材料 ›› 2019, Vol. 47 ›› Issue (5) : 51-54.
综述与专论

纳米晶ZnS薄膜的制备方法及应用进展

    杨扬1, 李刚1, 金克武2, 王天齐2, 彭赛奥2
作者信息 +

Preparation and application of nanocrystalline ZnS thin film

  • Yang Yang1, Li Gang1, Jin Kewu2, Wang Tianqi2, Peng Saiao2
Author information +
文章历史 +
PDF (1175K)

摘要

纳米晶ZnS薄膜具有带隙宽度大、光学透过率高、介电常数低、化学稳定性好等特点,在透明导电膜、铜铟镓硒(CIGS)薄膜太阳能电池、发光器件、功能玻璃等领域表现出巨大的应用潜力。综述了纳米晶ZnS薄膜常用的制备方法,如磁控溅射法、化学浴沉积法、真空蒸发法和化学气相沉积法,同时还介绍了纳米晶ZnS薄膜的掺杂改性研究及其在相关领域的应用进展。

Abstract

Having the features of broad band gap,high optical transmittance,low dielectric constant and excellent chemical stability,nanocrystalline ZnS films possess great potential in transparent conductive films,CIGS solar cells,light-emitting devices and functional glass.The recent researches on the preparation of nanocrystalline ZnS films were presented,such as magnetron sputtering,chemical bath depositon,vacuum evaporation and chemical vapor deposition.At the same time,the doping and applications of ZnS films were also introduced.

关键词

纳米晶ZnS薄膜 / 带隙宽度 / 透明导电膜 / CIGS太阳能电池

Key words

nanocrystalline ZnS thin film / band gap / transparent conductive film / CIGS solar cells

引用本文

引用格式 ▾
纳米晶ZnS薄膜的制备方法及应用进展[J]. 化工新型材料, 2019, 47(5): 51-54 DOI:

登录浏览全文

4963

注册一个新账户 忘记密码

参考文献

[1] Chelvanathan P,Yusoff Y,Haque F,et al.Growth and characterization of RF-sputtered ZnS thin film deposited at various substrate temperatures for photovoltaic application[J].Applied Surface Science,2015,334:138-144.
[2] Zhang R G,Wang B Y,Wei L,et al.Growth and properties of ZnS thin films by sulfidation of sputter deposited Zn[J].Vacuum,2012,86(8):1210-1214.
[3] Ummartyotin S,Infahsaeng Y.A comprehensive review on ZnS:from synthesis to an approach on solar cell[J].Renewable and Sustainable Energy Reviews,2016,55:17-24.
[4] Xu H,Wu L L,Wang W W,et al.The influence of hydrogen on the properties of zinc sulfide thin films deposited by magnetron sputtering[J].International Journal of Photo energy,2014,2014:1-6.
[5] Kim S,Kim T,Kang M,et al.Highly luminescent InP/GaP/ZnS nanocrystals and their application to white light-emitting diodes[J].Journal of The American Chemical Society,2012,134(8):3804-3809.
[6] Chen S F,Xie J,Yang Y,et al.High-constrst top-emitting organic light-emitting diodes with a Ni/ZnS/CuPc/Ni contras-tenhancing stack and a ZnS anti-reflection layer[J].Journal of Physics D:Applied Physics,2010,36:365101-365105.
[7] Mkawi E M,Ibrahim K,Ali M K M,et al.Electrodeposited ZnS precursor layer with improved electrooptical properties for efficient Cu2ZnSnS4 thin-film solar cells[J].Journal of Electronic Materials,2015,44(10):3380-3387.
[8] Nguyen M,Ernits K,Tai K F,et al.ZnS buffer layer for Cu2ZnSn(SSe)4 monograin layer solar cell[J].Solar Energy,2015,111:344-349.
[9] Leftheriotis G,Yianoulis P,Patrikios D,et al.Deposition and optical properties of optimised ZnS/Ag/ZnS thin films for energy saving applications[J].Thin Solid Films,1997,306(1):92-99.
[10] 谢大兵,华文深,王运波,等.ZnS∶Cu,Pb,Mn红外上转换薄膜的制备及其光谱特性研究[J].红外技术,2009,31(8):461-466.
[11] 憨勇,刘正堂,郑修麟.化学气相沉积制备ZnS块材料均匀性的研究[J].硅酸盐通报,1998,17(4):15-22.
[12] Shao L X,Chang K H,Hwang H L.Zinc sulfide thin films deposited by RF reactive sputtering for photovoltaic applications[J].Applied Surface Science,2003,212:305-310.
[13] Ghosh P K,Jana S,Nandy S,et al.Size-dependent optical and dielectric properties of nanocrystalline ZnS thins films synthesized via rf-magnetron sputtering technique[J].Materials Reseatch Bulletin,2007,42(3):505-514.
[14] Gayou V L,Hernandez B S,Constantino M E,et al.Structural studies of ZnS thin films grown on GaAs by RF magnetron sputtering[J].Vacuum,2010,84(10):1191-1194.
[15] Hwang D H,Ahn J H,Hui K N,et al.Structural and optical properties of ZnS thin films deposited by RF magnetron sputtering[J].Nanoscale Research Letters,2012,7:26-33.
[16] Yoo D Y,Choi M S,Chung C L,et al.Characteristics of radio frequency-sputtered ZnS on the flexible polyethylene terephthalate(PET) substrate[J].Journal of Nanscience and Nanotechnology,2013,13(12):7814-7819.
[17] Johnston D A,Carletto M H,Reddy K T R,et al.Chemical bath deposition of zinc sulfide based buffer layers using low toxicity materials[J].Thin Solid Films,2002,403:102-106.
[18] Roy P,Ota J R,Srivastava S K,et al.Crystalline ZnS thin films by chemical bath depositon method and its characterization[J].Thin Solid Films,2006,515(4):1912-1917.
[19] Gode F,Gumus C,Zor M.Investigations on the physical pro-perties of the polycrystalline ZnS thin films deposited by the chemical bath deposition method[J].Journal of Crystal Growth,2007,299(1):136-141.
[20] Allouche N K,Nasr T B,Kamoun N T,et al.Synthesis and properties of chemical bath deposited ZnS multilayer films[J].Materials Chemistry and Physics,2010,123(2):620-624.
[21] Yu F P,Ou S L,Yao P C,et al.Structural,Surface morphology and optical properties of ZnS films by chemical bath deposition at various Zn/S molar ratios[J].Journal of Nanomaterials,2014,594952:1-7.
[22] Subbaiah Y P V,Prathap S,Reddy K T R.Structural,electrical and optical properties of ZnS films deposited by close-spaced evaporation[J].Applied Surface Science,2006,253(5):2409-2415.
[23] Mohamed S H,Hagary M E,Ismail M E.Thickness and annealing effects on the optoelectronic properties of ZnS films[J].Journal of Physics D:Applied Physics,2010,43(7):1-7.
[24] Vishwakarma R.Effect of substrate temperature on ZnS films prepared by thermal evaporation technique[J].Journal of Theoretical and Applied Physics,2015,9(3):185-192.
[25] Medina M J R,Torres J H,Olaizola J L B,et al.Synthesis of Europium-doped ZnS nano-crystalline thin films with strong blue photoluminescence[J].RSC Advances,2016,6(109):107613-107621.
[26] Safeera T A,Johns N,Anila E I.Effect of anionic concentration on the structural and optical properties of nanostructured ZnS thin films[J].Optical Materials,2016,58:32-37.
[27] Song X P,Shi S W,Cao C B,et al.Effect of Ag-doping on microstructural,optical and electrical properties of sputtering-derived ZnS films[J].Journal of Alloy and Compounds,2013,551:430-434.
[28] Xue S W.N-type ZnS∶ Al thin films prepared by sulfurization of radio frequency sputtered ZnO∶ Al[J].Physica Scripta,2013,88(1):1-4.
[29] Sreedhar M,Reddy I N,Bera P,et al.Studies of Cu-doped ZnS thin films prepared by sputtering technique[J].Surface and Interface Analysis,2017,49(4):284-291.
[30] Mukherjee A,Mitra P.Characterization of Sn doped ZnS thin films synthesized by CBD[J].Materials Research,2017,20(2):1-6.
[31] Liu X J,Cai X,Qiao J S,et al.The design of ZnS/Ag/ZnS transparent conductive multilayer films[J].Thin Solid Films,2003,441(1):200-206.
[32] Yu Z N,Leng J,Xue W,et al.Highly flexible transparent and conductive ZnS/Ag/ZnS multilayer films prepared by ion beam assisted depositon[J].Applied Surface Science,2012,258(7):2270-2274.
[33] Kermani H,Fallah H R,Hajimahmoodzadeh M,et al.Design and construction of an improved nanometric ZnS/Ag/ZnS/Ag/ZnS transparent conductive electrode and investigating the effect of annealing on its charcteristics[J].Thin Solid Films,2013,539:222-225.
[34] Yang D Y,Lee S M,Jang W J,et al.Flexible organic light-emitting diodes with ZnS/Ag/ZnO/Ag/WO3 multilayer electrode as a transparent anode[J].Organic Electronics,2014,15(10):2468-2475.
[35] Jeon D H,Hwang D K,Kim D H,et al.Optimization of the ZnS buffer layer by chemical bath depositon for Cu(In,Ga)Se2 solar cells[J].Journal of Nanoscience and Nanotechnology,2016,16(5):5398-5402.
[36] Shin D H,Kim S T,Kim J H,et al.Study of band structure at the Zn(S,O,OH)/Cu(In,Ga)Se2 interface via rapid thermal annealing and their effect on the photovoltaic properties[J].Applied Materials and interface,2013,5(24):12921-12927.
[37] Wachau A,Schulte J,Agoston P,et al.Sputtered Zn(O,S) buffer layers for CIGS solar modules-from lab to pilot production[J].Progress in Photovoltaics:Research and Applications,2017,8(25):4395-4410.

基金资助

安徽省科技重大专项(17030901085);安徽省重点科技攻关项目(1704a0902010和1704a0902014)

AI Summary AI Mindmap
PDF (1149KB)

1134

访问

0

被引

导航
相关文章

AI思维导图

/