以金属Ti和ZnO陶瓷作为溅射靶材,采用直流和射频双靶磁控共溅射方法在玻璃衬底上制备Ti掺杂ZnO(TZO)透明导电薄膜,探究了衬底温度对薄膜光电性能的影响。采用扫描电子显微镜、原子力显微镜、X射线衍射仪、紫外-可见分光光度计和四探针测试仪对薄膜微观形貌、结构及光电性能进行了表征和分析。结果表明:制备的TZO薄膜均具有C轴取向生长的六角纤锌矿结构,衬底温度为350℃时TZO薄膜结晶质量最好,电阻率最小,为2.78×10-3Ω·cm,品质因子最高,达到334.1S/cm。所有薄膜样品在波长380～780nm区间平均透过率大于91%,随着衬底温度的升高,TZO薄膜的吸收边出现了蓝移。
Transparent and conductive Ti-doped ZnO (TZO) thin films were deposited on glass substrate by simultaneous RF magnetron sputtering of ZnO and DC magnetron sputtering of Ti.The influence of substrate temperature on the microstructure and properties of TZO were studied.The results showed that TZO had the strong c-axis orientation perpendicular to the surface of substrate.The lowest resistivity of 2.78×10-3Ω·cm can be obtained and the corresponding quality factor was 334.1S/cm when the substrate temperature was 350℃.The average optical transmittance of all thin films was over 91% in visible range(380～780 nm).All the band gaps of TZO thin films had blue shifts by contrast with the intrinsic ZnO film.
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基金资助
国家自然科学基金(51302075,61302004);湖北省自然科学基金重点项目(ZRZ2015000203)
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