硼掺杂金刚石薄膜(BDD)电极具有良好的电化学性能,是一种理想的电极材料。采用扫描电子显微镜、X射线衍射、拉曼光谱对制得的BDD电极的结构进行了表征。电极表面薄膜生长致密,晶体生长取向以(111)晶面为主,生长速率为2.8μm/h,晶格常数为3.5738$\mathring{A}$。利用循环伏安法(CV)研究了BDD电极在铁氰化钾/亚铁氰化钾体系中氧化还原反应的可逆性和动力学特征。研究结果表明,在铁氰化钾/亚铁氰化钾的浓度为20mmol/L条件下,BDD电极的氧化还原峰电势差达到205.75mV,在溶液中电极的氧化还原反应属于准可逆反应,氧化峰电流与反应物浓度成正比,电极过程动力学是受扩散控制为主。
Boron-doped diamond (BDD) electrode is an ideal electrode material with good electrochemical characterization.The surface coating structure of BDD electrode was characterized by scanning electron microscopy,X-ray diffraction and raman spectroscopy.Fine continuous films were composed of well-defined crystals with (1 1 1) preferred facet.The average growth rate of BDD film was 2.8μm/h,and its lattice constant was 3.5738$\mathring{A}$.The reversibility and kinetics of redox reaction in K3[Fe(CN)6]/K4[Fe(CN)6] solution at BDD electrode were test by cyclic voltammetry (CV).It was found that the redox peak potential difference of BDD electrode was 205.75mV in the solution of K3[Fe(CN)6]/K4[Fe(CN)6] with concentration of 20mmol/L.The redox reaction at BDD electrode was quasi-reversible reaction and the oxidation peak current was linearly proportional to the concentration of K3[Fe(CN)6]/K4[Fe(CN)6].The electrode kinetics was mainly controlled by diffusion process.
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基金资助
国家自然科学基金项目(51308171);2016年哈尔滨商业大学青年创新人才支持项目(2016QN075);哈尔滨商业大学大学生创新创业训练计划项目(201610240038)
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