化工新型材料

化工新型材料 ›› 2018, Vol. 46 ›› Issue (6) : 132-134.

新材料与新技术

水热合成纳米V₂O₅·nH₂O及其负微分电阻器件

作者信息 +

Preparation and negative differential resistance device of nano V₂O₅·nH₂O through hydrothermal synthesis

Zhang Hailian, Li Mingche, Zhang Jingci, Li Sizhong

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Received		Published
2018-01-09		2018-07-03
Issue Date	Revised Date
2018-07-03	2018-01-09

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摘要

采用水热法以偏钒酸铵和硝酸制备水合五氧化二钒(V₂O₅·nH₂O)纳米带,采用场发射扫描电子显微镜(FE-SEM)、透射电子显微镜(TEM)、X射线粉末衍射分析仪(XRD)及拉曼光谱分析仪(Raman Spectra)对产物进行表征,采用半导体特性分析仪测试以产物为沟道的场效应器件性能。结果表明:制得的V₂O₅·nH₂O纳米带宽100～150nm,厚约20nm,含水量n在0.5～1之间,具有类晶结构;器件具有N型负微分电阻(N-NDR)效应,与V₂O₅·nH₂O的双载流子导电及Poole-Frenkel发射相关。栅压为0～9V时,开关电压随栅压增大而升高,峰谷电流比变化小,期间,栅压为1V时电压跨度最大为0.61V。

Abstract

Hydrated vanadium pentoxide (V₂O₅·nH₂O) nanobelts were prepared by hydrothermal synthesis with NH₄VO₃ and HNO₃.The products were characterized by field emission scanning electron microscopy (FE-SEM),transmission electron microscopy (TEM),X-ray powder diffraction (XRD) and Raman spectra.Semiconductor characterization system was employed to test the performance of field effect transistor device which worked as channel.The results showed that the as-prepared V₂O₅·nH₂O nanobelts had a width around 100～150nm,the thick was about 20nm,the water content‘n’was in the range of 0.5～1,and crystal-like structure were demonstrated.The device exhibited N-type negative differential resistance (N-NDR) characteristic.The performance was related with ambipolar transportation and Poole-Frenkel emission of V₂O₅·nH₂O.While the gate voltage rising within 0～9V,the switching voltages ascended and the peak-valley current ratios varied slightly,during that,the voltage spans peaked at 0.61V when the gate voltage was 1V.

关键词

水热合成 / 水合五氧化二钒 / 负微分电阻 / 开关特性 / 场效应晶体管

Key words

hydrothermal synthesis / V₂O₅·nH₂O / negative differential resistive / switching effect / field effect transistor

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水热合成纳米V₂O₅·nH₂O及其负微分电阻器件[J]. 化工新型材料, 2018, 46(6): 132-134 DOI:

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