利用化学水浴法在硅纳米孔柱陈列(Si-NPA)上沉积了硫化镉(CdS)纳米晶,制得硫化镉/硅纳米孔柱阵列(CdS/Si-NPA)纳米异质结,并对非掺杂和锌(Zn)掺杂CdS/Si-NPA进行表征。研究结果表明:CdS/Si-NPA的结构保持了Si-NPA的规则阵列结构,通过加入一定量的氯化锌,实现了Zn对CdS的掺杂,Zn掺杂后的CdS晶粒大小由约18.1nm减小为约17.6nm,Zn的掺入导致了CdS/Si-NPA的光学带隙由约2.45eV增大到约2.49eV,Zn的掺杂能有效调控CdS带隙。
Cadmium sulfide (CdS) nanocrystals were deposited on silicon nanoporous pillar array (Si-NPA) by chemical bath method,the CdS/silicon nanoporous pillar array (CdS/Si-NPA) nano heterojunction was prepared,and the undoped and Zn doped CdS/Si-NPA were characterized.The results showed that the structure of CdS/Si-NPA maintained the regular array structure of Si-NPA,Zn doping into CdS was realized by adding a certain amount of zinc chloride.Furthermore,the results showed also that the crystal size of CdS after Zn doping decreased from about 18.1nm to 17.6nm,the incorporation of Zn led to the increase of optical band gap of CdS/Si-NPA from about 2.45eV to about 2.49eV,and the doping of Zn could effectively regulate the band gap of CdS.
[1] Jie Jiansheng,Zhang Wanjun,Bello Igor,et al.One-dimensional Ⅱ—Ⅵ nanostructures:Synthesis,properties and optoelectronic applications[J].Nano Today,2010,5(4):313-336.
[2] Loferski J J.Theoretical considerations governing the choice of the optimum semiconductor for photovoltaic solar energy conversion[J].J Appl Phys,1956,27(7):777-784.
[3] Taniguchi S,Hino T,Itoh S,et al.100h Ⅱ—Ⅵ blue-green laser diode[J].Electron Lett,1996,32(6):552-557.
[4] Morkoç H,Strite S,Gao G B,et al.Large-band-gap SiC,Ⅲ—Ⅴ nitride,and Ⅱ—Ⅵ ZnSe-based semiconductor device technologies[J].J Appl Phys,1994,76(3):1363-1398.
[5] Liu Y,Zapien J A,Shan Y Y,et al.Wavelength-Controlled Lasing in ZnxCd1-xS Single-Crystal Nanoribbons[J].Adv Mater,2005,17(11):1372-1377.
[6] Duan X,Huang Y,Agarwal R,et al.Single-nanowire electrically driven lasers[J].Nature,2003,421(6920):241-245.
[7] Zhang Q,Zhou S,Li Q,et al.Toward highly efficient CdS/CdSe quantum dot-sensitized solar cells incorporating a fullerene hybrid-nanostructure counter electrode on transparent conductive substrates[J].RSC Advances,2015,5(39):30617-30623.
[8] Xu Haijun,Li Xinjian.Silicon nanoporous pillar array:a siliconhierarchical structure with high light absorptionand triple-band photoluminescence[J].Opt Express,2008,16(5):2933-2941.
[9] Li Yong,Wang Xiaobo,Fan Zhiqiang,et al.Temperature-dependent photoluminescence of silicon nanoporous pillar array[J].Chin Phys Lett,2014,31(4):170-173.
[10] Li Yong,Wang Xiaobo,Tian Yongtao,et al.Effect of interface incorporation of cadmium nanocrystallites on the photovoltaic performance of solar cells based on CdS/Si multi-interface nanoheterojunction[J].Physica E,2014,64:45-50.
[11] Moualkia H,Hariech S,Aida M S.Structural and optical properties of CdS thin films grown by chemical bath deposition[J].Thin Solid Films,2009,518(4):1259-1262.
[12] Zhao X H,Wei A X,Zhao Y,et al.Structural and optical properties of CdS thin films prepared by chemical bath deposition at different ammonia concentration and S/Cd molar ratios[J].J Mater Sci(Mater.Electron),2013,24(2):457-462.
[13] Qian G X,Huo K F,Fu J J,et al.In situ growth of aligned CdS nanowire arrays on Cd foil and their optical and electron field emission properties[J].J Appl.Phys,2008,104(1):014312-014317.
[14] Kumar S,Sharma P,Sharma V.CdS nanofilms:synthesis and the role of annealing on structural and optical properties[J].J Appl Phys,2012,111(4):043519-043525.
[15] Kumar S,Sharma P,Sharma V.Structural transition in Ⅱ—Ⅵ nanofilms:Effect of molar ratio on structural,morphological,and optical properties[J].J Appl Phys,2012,111(11):113510-113518.
[16] Abdolahzadeh Ziabari A,Ghodsi F E.Growth,characterization and studying of sol-gel derived CdS nanoscrystalline thin films incorporated in polyethyleneglycol:Effects of post-heat treatment[J].Sol Energy Mater Sol Cells,2012,105:249-262.
[17] Li Y,Yuan S Q,Li X J.White light emission from CdS/Si nanoheterostructure array[J].Mater Lett,2014,136:67-70.
[18] Wang X B,Li Y,Yan L L,et al.Temperature-dependent Photoluminescence from GaN/Si nanoporous pillar array[J].Chin Phys Lett,2015,32(5):142-145.
[19] López R,Gómez R.Band-gap energy estimation from diffuse reflectance measurements on sol-gel and commercial TiO2:a comparative study[J].J Sol-Gel Sci Technol,2012,61(1):1-7.
[20] Kim D,Okahara S,Shimura K,et al.Layer-by-layer assembly of colloidal CdS and ZnS-CdS quantum dots and improvement of their photoluminescence properties[J].J Phys Chem C,2009,113(17):7015-7018.
[21] Song Y L,Bian H Y,Li Y,et al.Synthesis,structures and optical properties of CdS:Cd/Si multi-interface nanoheterojunction[J].J.Alloys Comp,2015,637(10):133-136.
[22] Singh V,Chauhan P.Structural and optical characterization of CdS nanoparticles prepared by chemical precipitation method[J].J Phys Chem Solids,2009,70(7):1074-1079.
[23] Utama M I B,Zhang J,Chen R,et al.Synthesis and optical properties of Ⅱ—Ⅵ 1D nanostructures[J].Nanoscale,2012,4(5):1422-1435.
基金资助
河南省高等学校重点科研项目(15A140012)
PDF
(2142KB)
