酸碱制备条件对B2O3-SiO2∶Tb3+发光材料性能的影响

马辉, 王喜贵*, 娜米拉

化工新型材料 ›› 2018, Vol. 46 ›› Issue (1) : 106 -110.

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化工新型材料 ›› 2018, Vol. 46 ›› Issue (1) : 106-110.
新材料与新技术

酸碱制备条件对B2O3-SiO2∶Tb3+发光材料性能的影响

    马辉, 王喜贵*, 娜米拉
作者信息 +

Influence of acid-base catalysis condition on the luminescent property of B2O3-SiO2∶Tb3+

  • Ma Hui, Wang Xigui, Namila
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摘要

为了研究不同水解条件下制备掺杂稀土离子发光材料的发光差异,通过溶胶-凝胶法以正硅酸乙酯和硼酸三甲酯为原料,制备了稀土离子Tb3+掺杂的以B2O3-SiO2为基质的发光材料。通过荧光激发光谱和发射光谱分析了不同酸碱催化条件下制备材料的发光情况,结果显示酸碱二步催化下制备的材料发光性能最好。利用FT-IR、XRD等对其结构进行分析,发现在300℃退火处理后有B2O3晶体生成,此时激发光谱蓝移;600℃退火处理后有Si—O—B键存在,此时发光性能最好,表明B掺杂SiO2的网络有利于材料的发光。结合结构分析在酸碱条件下的水解机理,认为酸碱二步催化法能调节正硅酸乙酯和硼酸三甲酯的水解速率,更有利于B掺杂进SiO2结构中,使制备的材料发光性能增强。

Abstract

In order to study the luminescence materials doped with rare earth ions under different hydrolysis conditions,the material based on B2O3-SiO2 doped with rare-earth ion Tb3+ was synthesized by sol-gel method.Excitation and emission spectroscopy were used to study luminescent properties under the different acid-base catalysis conditions.The results showed that the luminescence in two-step acid-base was best.Using TR,XRD and other modern test technology characterized and analyzed the structure.Results showed that after annealing at 300℃ B2O3 crystals were formed,the excitation spectrum had blue shift,and produced Si—O—B after annealing at 600℃.At this point,the luminescent property was best.It indicated that the network structure of the boron doped silicon dioxide was helpful to the luminescence of material.Finally,the reason was analyzed from the point of view of different hydrolysis mechanism under the acid and alkali conditions.It was concluded that the hydrolysis products of two esters can be more uniformly mixed in the presence of two-step acid-base,which was helpful for B doping into SiO2 structure.

关键词

溶胶-凝胶法 / Tb3+ / 水解机理

Key words

sol-gel method / Tb3+ / hydrolysis mechanism

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酸碱制备条件对B2O3-SiO2∶Tb3+发光材料性能的影响[J]. 化工新型材料, 2018, 46(1): 106-110 DOI:

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基金资助

国家自然科学基金资助项目(21261010);内蒙古自治区自然科学基金项目(2015MS0227);内蒙古师范大学“十百千”人才工程第二层次人选(学科带头人)研究基金项目(RCPY-2-2012-K-046)

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