化工新型材料

化工新型材料 ›› 2017, Vol. 45 ›› Issue (9) : 178-180.

科学研究

ZrB₂-SiC挥发相图的热力学计算研究

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Thermodynamic calculation of ZrB₂-SiC volatility diagram

Li Hui^1,2, Liu Zhe¹, Luo Zhili¹, Sun Guodong¹, Yu Pengfei¹

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文章历史 +

Received		Published
2016-06-14		2017-10-19
Issue Date	Revised Date
2017-10-19	2016-06-14

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摘要

采用热力学平衡方法,以1227℃为例,计算了硼化锆(ZrB₂)和碳化硅(SiC)的挥发相图,并由此例构建了硼化锆-碳化硅复合材料(ZrB₂-SiC)的挥发相图。在1.01×10⁵Pa条件下,计算得到ZrB₂和SiC发生氧化的平衡分压logPO₂分别为-15.01Pa和-17.04Pa。结果表明,氧气分压会对ZrB₂、SiC和ZrB₂-SiC的氧化行为产生重要影响。随着氧分压升高,ZrB₂主要气相氧化产物的分压增加,SiC主要气相氧化产物的分压先增加后减小。对ZrB₂-SiC而言,随着氧分压的增大,在1227℃时体系中的主要气相产物转变序列为SiO(g)→B₂O₃(g)→BO₂(g)。

Abstract

The volatility diagrams of ZrB₂ and SiC at temperature of 1227℃ were studied using thermodynamic equilibrium method,and then the volatility diagram of ZrB₂-SiC at 1227℃ was constructed based on the results of ZrB₂ and SiC.At the condition of 1.01×10⁵Pa,the equilibrium oxygen partial pressures logPO₂ for the oxidation of ZrB₂ and SiC were about -15.01Pa and -17.04Pa,respectively.The results showed that pressure will bring important influence on the oxidation of ZrB₂,SiC and ZrB₂-SiC.With increasing oxygen partial pressure (PO₂),the vapor pressure of predominant gaseous species for ZrB₂ also was increased,while the vapor pressure for those of SiC increased firstly and then decreased.For ZrB₂-SiC at 1227℃,the predominant vapor transition sequence was predicted be SiO(g)→B₂O₃(g)→BO₂(g) with increasing PO₂.

关键词

ZrB₂-SiC / 超高温陶瓷 / 挥发相图 / 氧化 / 热力学

Key words

ZrB₂-SiC / ultra-high temperature ceramic / volatility diagram / oxidation / thermodynamics

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ZrB₂-SiC挥发相图的热力学计算研究[J]. 化工新型材料, 2017, 45(9): 178-180 DOI:

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