Influence of Si source type on microstructure and luminescence property of 1D SiC nanomaterial

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  • 1. School of Material and Chemical Engineering,Zhengzhou University of Light Industry,Zhengzhou 450051;
    2. School of Material Science and Engineering,Henan University of Technology,Zhengzhou 450001

Received date: 2019-06-17

  Revised date: 2020-10-02

  Online published: 2021-01-21

Abstract

At the sintering temperature of 1500 ℃ for 3 h in hydrogen atmosphere,1D SiC nanomaterials were prepared with Si and SiO2 powers as Si source,activated carbon(AC) and Fe2O3 as the C source and additive,respectively.Effects of Si source types on microstructure and luminescence properties of 1D SiC were studied.Results showed that the reaction activity of Si with AC was stronger than that of SiO2.1D SiC with better luminescence properties were prepared easily,they had a smooth surface,a core-shell structure wrapped in amorphous SiO2 shell,and a wide emission wavelength.Compared with SiC bulk materialss,the band gaps at 467 nm and 435 nm showed large blue shifts due to the existence of amorphous SiO2 layer and structural defects of 1D SiC.

Cite this article

Guo Huishi, Li Wenfeng, Huang Qingfei . Influence of Si source type on microstructure and luminescence property of 1D SiC nanomaterial[J]. New Chemical Materials, 2020 , 48(12) : 108 -110 . DOI: 10.19817/j.cnki.issn 1006-3536.2020.12.026

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