Abstract: Sillicon carbide fibers were prepared from polycarbosilane(PCS) fibers by radiation oxidation & thermal curing technique.The chemical structure of PCS fibers after radiation oxidation and thermal curing process was studied using FT-IR,and the oxygen content of all the fibers was determined.The thermal stability of SiC fiber was evaluated via the loss of strength and the microstructure changes was shown using XRD and SEM.It was found that Si—OH was introduced onto PCS fibers molecular chains by radiation oxidation and then consumed in thermal curing reaction.The oxygen content of SiC fibers with a minimum of 6% at 200kGy could be controlled by adjusting dose.Thermal stability of SiC fiber was closely related to oxygen content and the retention rate of strength at 1400℃ was 75% for SiC fibers with lower oxygen content.The strength loss at 1500℃ was found to be related to crystal growth and decomposition of oxidation product.
刘伟华,吴永龙,张文发,张文礼,李诚,吴国忠,王谋华. 辐射氧化法制备低含氧量碳化硅纤维 及耐温性能的研究[J]. 化工新型材料, 2018, 46(10): 119-122.
Liu Weihua,Wu Yonglong,Zhang Wenfa,Zhang Wenli,Li Cheng,Wu Guozhong,Wang Mouhua. SiC fiber obtained by radiation oxidation and study on the thermal stability. New Chemical Materials, 2018, 46(10): 119-122.
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